2SD1472 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 1 3 2 ID 2 kΩ (Typ) 0.5 kΩ (Typ) 3 1. Base 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC i C(peak)- PC - Tj Tstg ID 2 1 Ratings 120 120 7 1.5 3.0 1.0 150 - 55 to +150 1.5 Unit V V V A A W °C °C A Notes: 1. Pluse ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 - - 2000 - - - - - Typ - - - - - - - - - - - Max - - - 1.0 10 30000 1.5 2.0 2.0 2.5 3.0 V V V V V Unit V V V µA µA Test conditions I C = 0.1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I D = 1.5 A- 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage h FE VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 E to C diode forward voltage Notes: 1. Pulse test 2. Marking is “CT”. VD Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current IC (A) Area of Safe Operation 10 i C (peak) 3 10 s ms 0µ 1 s 0m 1 µs 1.0 0.3 0.1 0.03...