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2SD1470
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
1
3
2SD1470
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg
2 1
Ratings 60 60 7 1 2 1 150 –55 to +150
Unit V V V A A W °C °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 60 60 7 — — 2000 — — Typ — — — — — — — — Max — — — 10 10 100000 1.5 2.
2SD1470 Datasheet
