Datasheet Details
| Part number | 2SD1479 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.28 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1479-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 2SD1479.
| Part number | 2SD1479 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.28 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1479-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak 6 A IBP Base Current-Peak Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 2.5 A 2.5 W 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1479 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1479 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1400 | NPN Transistor |
| 2SD1402 | NPN Transistor |
| 2SD1403 | NPN Transistor |
| 2SD1404 | Silicon NPN Power Transistor |
| 2SD1405 | NPN Transistor |
| 2SD1406 | NPN Transistor |
| 2SD1407 | NPN Transistor |
| 2SD1408 | NPN Transistor |
| 2SD1409 | NPN Transistor |
| 2SD1409A | NPN Transistor |