Datasheet Details
| Part number | 2SD1476 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.60 KB |
| Description | Power Transistor |
| Datasheet | 2SD1476_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1476.
| Part number | 2SD1476 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.60 KB |
| Description | Power Transistor |
| Datasheet | 2SD1476_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A IB Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 30 W 1.4 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
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