| Part Number | 2SD1479 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection . T V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= 2A; IB= 1A VCB= 750V; IE= 0 VCB= 1500V; IE= 0 IC= 2A; VCE= 5V 5.0 V 1. |
2SD1479 Datasheet and Specifications PDF
The 2SD1479 is a NPN Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SD1479 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;con. -emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=1mA; IC=0 IC=2A; IB=1A IC=2A; IB=1A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 IEBO hFE ts tf Emitter cut-off current DC current gain Storage time IC=2.5A IBend=1.1A,LB=10µH Fall time VEB=5V; IC=0 IC=2A ; VC. |