2SD1479 Overview
Description
With TO-3PN package - High voltage ,high reliability - High speed switching - Wide area of safe operation APPLICATIONS - For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 2.5 6 2.5 80 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=1mA; IC=0 IC=2A; IB=1A IC=2A; IB=1A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 IEBO hFE ts tf Emitter cut-off current DC current gain Storage time IC=2.5A IBend=1.1A,LB=10µH Fall time VEB=5V; IC=0 IC=2A ; VCE=5V 2 MIN 5 2SD1479 SYMBOL V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V 5.0 1.5 50 1.0 50 5 9.0 1.0 V V µA mA µA µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1479 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3.
