q q q
High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 100 60 15 12 6 3 40 2 150.
55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Ba.
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Power Transistors
2SD1474
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q
High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 100 60 15 12 6 3 40 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.
2SD1474 Datasheet
