2SD1970 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 3 1. Emitter 2. Collector 3. Base ID 32 kΩ (Typ) 0.4 kΩ (Typ) 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) ID PC - Tj Tstg Ratings 24 24 7 2 4 2 10 150 - 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CEO VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio h FE h FE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1. Pulse test. VCE(sat) VBE(sat) VD Min 24 25 7 - - 7000 2000 - - - Typ - - - - - - - - - - Max 32 33 - 1 5 30000 - 1.5 2.0 2.0 - V V V Unit V V V µA µA Test conditions I C = 1 m A, IE = 0 I C = 1 A, L = 20 m H, RBE = ∞ I E = 5 m A, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VCE = 2 V, IC = 0.5 A- 1 VCE = 2 V, IC = 2 A- 1 I C = 2 A, IB = 2 m A- 1 I C = 2 A, IB = 2 m A- 1 I D = 2 A- 1 Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 10 i C (peak) Collector current IC (A) 3 1.0 0.3 0.1 0.03 IC (max) Area of Safe Operation ms =1 PW s n 10 m tio ra ) pe °C O 25 C D C= (T Ta = 25°C 1 shot pulse 0.3 1.0 3 10 30 100 Collector to emitter voltage VCE (V) 50 100 Case temperature TC (°C) 0.01 0.1 Typical Output Characteristics 2.0 90 80 70 60 50 1.2 40 30 µA Ta = 25°C Pulse IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 0 Collector current IC (A) 2.0 Typical Transfer Characteristics VCE = 2 V Pulse Ta = 25°C Collector current IC...