2SD1974 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 2, 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC ic (peak) ID PC - Tj Tstg Ratings 25 25 6 0.8 1.5 0.6 1.0 150 - 55 to +150 Unit V V V A A A W °C °C 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 - - - 250 - - Typ - - - - - - - - - - Max - 35 35 - 0.2 0.5 0.2 1200 0.4 1.5 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I C = 0.8 A, RBE = ∞, L = 20 m H I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A- 1 I C = 0.8 A, IB = 80 m A- 1 I D = 0.6 A- 1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Notes: 1. Pulse test 2. Marking is “ES”. I EBO h FE VCE(sat) VD Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (A) Area of Safe Operation 10 3 i C(peak) 1.0 IC(max) 0.3 0.1 0.03 Ta = 25°C 1 Shot Pulse D C O pe PW = 0.8 m s m s ra tio n 50 100 150 Ambient Temperature Ta...