2SJ181S
2SJ181S is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
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- Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2 3
2SJ181(L), 2SJ181(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg
2 1
Ratings
- 600 ±15
- 0.5
- 1.0
- 0.5 20 150
- 55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS
- 600 ±15
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- 2.0
- 0.3
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- Typ
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- 15 0.45 220 55 13 7 20 35 35
- 0.85 230 Max
- - ±10
- 100
- 4.0 25
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