2SJ217
2SJ217 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- -
- - Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
- Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg
2 1
Ratings
- 60 ±20
- 45
- 180
- 45 150 150
- 55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS
- 60 ±20
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- 1.0
- - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 16
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- -
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- Typ
- -
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- 0.033 0.045 25 3800 2000 490 30 235 670 450
- 1.35 300 Max
- - ±10
- 250
- 2.0 0.042 0.06
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- - S p F p F p F ns ns ns ns V ns I F...
