Download 2SJ410 Datasheet PDF
Hitachi Semiconductor
2SJ410
2SJ410 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline TO-220FM 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings - 200 ±20 - 6 - 24 - 6 30 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min - 200 ±20 - - - 2.0 - 2.0 - - - - - - - - - Typ - - - - - 0.7 3.2 900 280 65 18 50 90 40 - 1.0 220 Max - - ±10 - 250 - 4.0 0.85 - - - - - -...