2SJ452 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Marking is "ZM- ". Symbol VDSS VGSS ID I D(pulse)- Pch Tch Tstg Ratings - 50 ±20 - 0.2 - 0.4 150 150 - 55 to +150 Unit V V A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS Min - 50 ±20 - - - 0.5 - - 0.1 - - - - - - - Typ - - - - - 5.0 7.5 0.19 1.1 15.7 0.12 0.45 1.3 8.4 5.6 Max - - - 1.0 ±2.0 - 1.5 7.0 12.0 - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F µs µs µs µs Test conditions I D = - 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = - 40 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = - 10 µA, VDS = - 5 V I D = - 100 m A VGS...