2SJ479 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 25 mΩ typ. - 4V gate drive devices. - High speed switching Outline LDPAK 4 4 1 1 1. Gate 2. Drain 3. Source 4. Drain 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings - 30 ±20 - 30 - 120 - 30 50 150 - 55 to +150 Unit V V A A A W °C °C 2SJ479(L), 2SJ479(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min - 30 ±20 - - - 1.0 - - 12 - - - - - - - - - Typ - - - - - 25 40 20 1700 950 260 20 290 170 130 - 1.1 70...