Download 2SJ504 Datasheet PDF
Hitachi Semiconductor
2SJ504
2SJ504 is P-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - Low on-resistance R DS(on) = 0.042Ω typ. - Low drive current. - 4V gate drive devices. - High speed switching. Outline TO- 220FM 1 2 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR I AP - 3 3 2 1 Ratings - 60 ±20 - 20 - 80 - 20 - 20 34 30 150 - 55 to +150 Unit V V A A A A m J W °C °C EAR- Pch- Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω, L=100µH Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min - 60 ±20 - - - 1.0 - - 10 - - - - - - - - - Typ - - - - - 0.042 0.065 16 1750 800 180 16 100 230...