2SK1298 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3PFM 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 60 ±20 40 160 40 50 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 60 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 22 - - - - - - - - - Typ - - - - - 0.015 0.02 35 3600 1850 450 30 170 700 350 1.2 155 Max - - ±10 250 2.0 0.018 0.025 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 40 A, VGS = 0 I F = 40 A, VGS = 0, di F/dt = 50 A/µs I D = 20 A, VGS = 10 V, RL = 1.5 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 20 A, VGS = 10 V - 1 I D = 20 A, VGS = 4 V - 1 I D = 20 A, VDS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area 500 200 Drain Current ID (A)...