2SK1838 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2SK1838(L), 2SK1838(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 250 ±30 1 2 1 10 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 250 ±30 - - 2.0 0.3 - - - - - - - - - - Typ - - - - - 0.5 5.5 60 30 5 5 6 10 4.5 0.96 160 Max - - ±10 100 3.0 - 8.0 - - - - - - - - - Unit V V µA µA V S Ω p F p F p F ns ns ns ns V ns I F = 1 A, VGS = 0 I F = 7 A, VGS = 0, di F/dt = 100 A/µs VGS = 10 V, ID = 0.5 A, RL = 60 Ω Test conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 m A VDS = 10 V, ID = 0.5 A - 1 I D = 0.5 A, VGS = 10 V - 1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) |yfs| RDS(on) Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2SK1838(L), 2SK1838(S) Power vs. Temperature...