2SK1999
2SK1999 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Features
- High gain, high efficiency PG = 15 d B, ηD = 65% typ (f = 200 MHz)
- pact package Suitable for push
- pull circuit
Outline
. et4U.
Data Shee
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Data Sheet 4 U .
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Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch- Tch Tstg
Ratings 120 ±20 12 180 150
- 55 to +150
Unit V V A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage- 1 Gate to source breakdown voltage- 1 Symbol Min V(BR)DSS V(BR)GSS 120 ±20
- 0.5 Typ
- -
- - Max
- - 0.5 2.0 Unit V V m A V V S p F p F W % Test conditions I D = 1 m A, VGS = 0 I G = ±100 µA, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 3 A, VGS = 10 V- 2 I D = 2.5 A, VDS = 10 V- 2 VGS = 5 V, VDS = 0 f = 1 MHz VDS = 50 V, VGS = 0 f = 1 MHz VDS = 60 V, IDQ = 0.2 A f = 200 MHz, Pin = 5 W
Zero gate voltage drain current- 1 I DSS Gate to source cutoff voltage-
1 1
VGS(off) et4U.
Drain to source cutoff voltage- Forward transfer admittance- 1 Input capacitance- 1 Output capacitance- 1 Output Power Drain Efficiency Notes: 1. Shows / unit FET 2. Pulse Test
VDS(on) .
- 2.7 3.5 |yfs| Ciss Coss Po ηD 1.5
- - 150
- 1.8 185 60 180 65
- -
- -
- Data Shee
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Data Sheet 4 U .
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2SK1999 et4U.
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Data...
