2SK2247 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 30 ±20 2 4 2 1 150 - 55 to +150 Unit V V A A A W °C °C Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) 3. Marking is “QY” Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 30 ±20 - - 1.0 - - Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 1.5 - - - - - - - Typ - - - - 1.5 0.3 0.22 1.9 177 116 43 8 14 37 33 Max - - ±5 1 2.0 0.45 0.35 - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns Test conditions I D = 1 m A, VGS = 0 I G = ±10 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 24 V, VGS = 0 I D = 100 µA, VDS = 10 V ID = 1 A VGS = 4 V- 1 ID = 1 A VGS = 10 V- 1 ID = 1 A VDS = 10 V- 1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Ω PW = 2 µs Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) Power vs. Temperature Derating 1.6 Channel Dissipation Pch- - (W) (- - on the almina ceramic board) I D (A) 10 3 1 0.3 0.1 0.03 0.01 0.1 Ta = 25 °C 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) Maximum Safe Operation Area 1.2 m s = 10 m s (1 Drain...