2SK2802 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 m A) - 2.5V gate drive devices. - Small package (MPAK) Outline MPAK 3 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 30 ±10 0.5 1.0 150 150 - 55 to +150 Unit V V A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 30 ±10 - - 0.5 - - 0.7 - - - - - - - Typ - - - - - 0.2 0.3 1.2 14.0 68 3.0 0.27 1.5 2.2 2.15 Max - - 1.0 ±10 1.5 0.28 0.5 - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F µs µs µs µs Test Conditions I D = 100µA, VGS = 0 I G = ±100µA, VDS = 0 VDS = 30 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = 10µA, VDS = 5V I D = 100 m A VGS = 4V Note2 I D = 40 m A VGS = 2.5V Note2 I D = 250 m A VDS = 10V Note2 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 250 m A RL = 40Ω Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 2. Pulse test 3. Marking is “ZV- ” t d(on) tr t d(off) tf Main Characteristics Power vs. Temperature Derating 200 Pch (m W) I D (A) Maximum Safe Operation Area 1 ms 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 Channel Dissipation Drain...