2SK2939S Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS =0.020 Ω typ. - High speed switching - 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 G 1 2 1. Gate 2. Drain 3. Source 4. Drain 2SK2939(L),2SK2939(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 - 55 to +150 Unit V V A A A A m J W °C °C Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2SK2939(L),2SK2939(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 - - 1.5 - - 14 - - - - - - - - - Typ - - - - - 0.020 0.032 23 1100 540 200 15 180 175 195 0.95 40 Max - - ±10 10 2.5 0.026 0.050 - - - - - -...