2SK2930 - Silicon N Channel MOS FET

Product Overview

Hitachi Semiconductor

Part number	2SK2930
Manufacturer	Hitachi Semiconductor
File Size	53.14 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2930 Datasheet
Additional preview pages of the 2SK2930 datasheet.

Low on-resistance R DS =0.020 Ω typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline TO.
220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VG.

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Published: Mar 30, 2005 |