2SK2930 Overview
2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source...
2SK2930 Key Features
- Low on-resistance R DS =0.020 Ω typ
- High speed switching
- 4V gate drive device can be driven from 5V source