Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-557B (Z) 3rd. Edition Jun 1998 Features
- Low on-resistance R DS =0.026 Ω typ.
- High speed switching
- 4V gate drive device can be driven from 5V source
Outline
TO- 220CFM
G 1 2 3
1. Gate 2. Drain 3....