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2SK2933 - Silicon N Channel MOS FET

Datasheet Summary

Features

  • Low on-resistance R DS(on) = 0.040Ω typ.
  • 4V gate drive devices.
  • High speed switching Outline TO.
  • 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP No.

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Datasheet Details

Part number 2SK2933
Manufacturer Hitachi Semiconductor
File Size 51.56 KB
Description Silicon N Channel MOS FET
Datasheet download datasheet 2SK2933 Datasheet
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Full PDF Text Transcription

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2SK2933 Silicon N Channel MOS FET High Speed Power Switching ADE-208-556B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.040Ω typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 15 60 15 15 19 25 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3.
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