2SK2932 Overview
2SK2932 Silicon N Channel MOS FET High Speed Power Switching ADE-208-555B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source...
2SK2932 Key Features
- Low on-resistance R DS =0.055 Ω typ
- High speed switching
- 4V gate drive device can be driven from 5V source