2SK3000 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 m A) - 4V gate drive devices. - Small package (MPAK) - Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 G 1. Source 2. Gate 3. Drain S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 40 ±10 1.0 4.0 1.0 400 150 - 55 to +150 Unit V V A A A m W °C °C 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (10 mm x 10 mm x 1 mmt ) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Drain to source voltage Gate to source breakdown voltage Symbol V(BR)DSS VDS(SUS) V(BR)GSS Min 40 40 ±10 - - 1.1 - Typ - - - - - - 0.3 Max 60 - - 1.0 ±5 2.1 0.5 Unit V V V µA µA V Ω Ω S p F p F p F µs µs µs µs Test Conditions I D = 100µA, VGS = 0 L = 100µH, I D = 3 A I G = ±100µA, VDS = 0 VDS = 40 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = 10µA, VDS = 5V I D = 450 m A VGS = 4V Note3 - 0.5 - - - - - - - 0.25 1.2 14.0 68 3.0 0.12 0.6 1.7 1.4 0.3 - - - - - - - - I D = 450 m A VGS = 10V Note3 I D = 450 m A VDS = 10V Note3 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, I D = 450 m A RL = 22Ω Zero gate voltege drain current I DSS Gate to source leak current I GSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance |yfs| Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test 4. Marking is “ZY”. t d(on) tr t d(off)...