2SK3135S
2SK3135S is N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS(on) = 6 mΩ typ.
- Low drive current
- 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
2 1 1 2 3
1. Gate 2. Drain 3. Source 4. Drain
2SK3135(L),2SK3135(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg
Note 3 Note 3 Note 2 Note 1
Ratings 60 ±20 75 300 75 50 214 100 150
- 55 to +150
Unit V V A A A A m J W °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
2SK3135(L),2SK3135(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 60
- - 1.0
- - |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 50
- -
- -
- -
- -
- -
- - Typ
- -
- - 6.0 8.0 80 7100 1000 300 125 25 25 60 300 520 330 1.05 90 Max
- ±0.1 10 2.5 7.5 12
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