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2SK3135(L),2SK3135(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-695B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
2 1 1 2 3
1
2
3
1. Gate 2. Drain 3. Source 4. Drain
3
2SK3135(L),2SK3135(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg
Note 3 Note 3 Note 2 Note 1
Ratings 60 ±20 75 300 75 50 214 100 150 –55 to +150
Unit V V A A A A mJ W °C °C
1.
2SK3135L Datasheet
