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2SK3136
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-696B (Z) 3rd. Edition February 1999 Features
• Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
2SK3136
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg
Note 3 Note 3 Note 2 Note 1
Ratings 40 ±20 75 300 75 50 333 100 150 –55 to +150
Unit V V A A A A mJ W °C °C
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
2SK3136 Datasheet
