2SK3136 Description
2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B (Z) 3rd.
2SK3136 Key Features
- Low on-resistance R DS(on) = 4.5 mΩ typ
- Low drive current
- 4 V gate drive device can be driven from 5 V source
- Part: 2SK3136
- Manufacturer: Hitachi Semiconductor
- Size: 52.06 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
2SK3136 | Silicon N-Channel MOSFET |