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2SK3130
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3130
Switching Regulator Applications
Unit: mm • • • • • • Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.
2SK3130 Datasheet
