2SK3130 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator Applications Unit: mm - - - - - - Reverse-recovery time: trr = 85 ns Built-in high-speed flywheel diode Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 40 345 6 4 150 - 55~150 Unit V V V A W m J A m J °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 m H, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution 2004-07-06 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd VDD ∼ - 400 V, VGS = 10 V, ID = 6 A Symbol IGSS V (BR)...