The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SK3136
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) =4.5 mΩ typ.
• Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
123
G
REJ03G1068-0400 (Previous: ADE-208-696B)
Rev.4.00 Sep 20, 2005
D 1. Gate 2. Drain (Flange) 3. Source
S
Rev.4.00 Sep 07, 2005 page 1 of 7
2SK3136
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3.
2SK3136 Datasheet
