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2SK3133L - N-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 7 mΩ typ.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3133 N-Channel MOSFET
2SK3133S N-Channel MOSFET
2SK3134 N-Channel MOSFET
2SK3134L N-Channel MOSFET
2SK3134S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3133(L),2SK3133(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-720 (Z) Target Specification 1st. Edition February 1999 Features • Low on-resistance R DS(on) = 7 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3133(L),2SK3133(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.