2SK3147
2SK3147 is N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS = 0.1 Ω typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
DPAK- 2
D 2 1 2 G 1 3
3 S
1 2
1. Gate 2. Drain 3. Source 4. Drain
2SK3147(L),2SK3147(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 100 ±20 5 20 5 5 2.5 20 150
- 55 to +150
Unit V V A A A A m J W °C °C
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 100 ±20
- - 1.0
- - 3.5
- -
- -
- -
- -
- Typ
- -
- -
- 0.1 0.13 6 420 185 100 10 35 110 60 0.85 85 Max
- - ±10 10 2.5 0.13 0.18
- -
- -
- -...
