Download 2SK3161 Datasheet PDF
Hitachi Semiconductor
2SK3161
2SK3161 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features - Low on-resistance R DS = 90 mΩ typ. - High speed switching - 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 1 1. Gate 2. Drain 3. Source 4. Drain 2SK3161(L),2SK3161(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 200 ±20 15 60 15 15 15 75 150 - 55 to +150 Unit V V A A A A m J W °C °C Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 ±20 - - 1.0 - - 16 - - - - - - - - - Typ - - - - - 90 95 20 1600 510 250 20 120 400 170 0.85 100 Max - - ±10 10 2.5 115 125 - - - - - - - -...