2SK322 Datasheet | Hitachi Semiconductor

Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 2 1. Drain 2. Source 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings - 15 - 15 50 5 150 150 - 55 to +150 Unit V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Note: Grade Mark I DSS P WP 5 to 16 Q WQ 14 to 24 Symbol V(BR)GDO V(BR)GSO I GSS I DSS- Min - 15 - 15 - 5 - 25 R WR Typ - - - - - 45 S Max - - - 10 50 - 3.0 - Unit V V n A m A V m S T WT Test conditions I G = - 100 µA I G = - 100 µA VGS = - 7 V, VDS = 0 VDS = 5 V, VGS = 0 (pulse) VDS = 5 V, ID = 100 µA VDS = 5 V, VGS = 0, f = 1 k Hz VGS(off) |yfs| 1. The 2SK322 is grouped by I DSS as follows. WS 28 to 42 20 to 32 36 to 50 Maximum Channel Power Dissipation Curve Channel Power Dissipation Pch (m W) 150 Typical Output Characteristics 30 VDS = 5 V V GS = 0 V Drain Current ID (m...