2SK3233 Datasheet | Hitachi Semiconductor

Features - - - - - Low on-resistance: R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 n C typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings Outline TO- 220CFM 1 2 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Tehrmal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) Ratings 500 ±30 5 20 5 Unit V V A A A A A W °C/W °C °C I DR I DR I AP Note1 (pulse) 20 5 30 4.17 150 - 55 to +150 Note3 Note2 Pch θ ch-c Tch Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 500 - - 3.0 - 3.0 - - - - - - - - - - - - - Typ - - - - 1.1 4.5 580 70 13 20 15 65 15 15 3 8 0.85 400 1.5 Max - ±0.1 1 4.0 1.5 - - - - - -...