2SK3288 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 2.7 Ω typ. (VGS = 10 V , ID = 50 m A) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 m A) - 4 V gate drive device. - Small package (MPAK) Outline MPAK 3 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note 2 Note1 Ratings 30 ±20 100 400 100 400 150 - 55 to +150 Unit V V m A m A m A m W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 30 ±20 - - 1.3 - - 55 - - - - - - - Typ - - - - - 2.7 4.7 85 3 8 1 100 300 1100 900 Max - - ±5 1 2.3 3.5 7.0 - - - - - - - - Unit V V µA µA V Ω Ω m S p F p F p F ns ns ns ns Test Conditions I D = 100 µA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 I D = 10µA, VDS = 5 V ID = 50 m A,VGS = 10 V Note 3 ID = 20 m A,VGS = 4 V Note 3 ID = 50 m A, VDS = 10 V Note 3 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance RDS(on) |yfs| Ciss Coss VDS = 10 V VGS = 0 f = 1 MHz I D = 50 m A, VGS = 10 V RL = 200 Ω Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Note: 3. Pulse test 4. Marking is EN t d(on) tr t d(off) tf Main Characteristics Power vs. Tenperature Derating 800 5 2 Maximum Safe Operation...