2SK359 Datasheet | Hitachi Semiconductor

Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS = - 4 V Symbol VDSX- VGSS ID IG Pch Tch Tstg Ratings 20 ±5 30 ±1 400 150 - 55 to +150 Unit V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: D 4 to 8 E 6 to 10 F 8 to 12 Symbol V(BR)DSX I GSS I DSS- Min 20 - 4 0 8 - - - - - Typ - - - - 14 2.5 1.6 0.03 30 2 Max - ±20 12 - 2.0 - - - - - - Unit V n A m A V m S p F p F p F d B d B Test conditions I D = 100 µA, VGS = - 4 V VGS = ±5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 10 µA VDS = 10 V, VGS = 0, f = 1 k Hz VDS = 10 V, VGS = 0, f = 1 MHz VGS(off) y fs Ciss Coss Crss PG NF VDS = 10 V, VGS = 0, f = 100 MHz 1. The 2SK359 is grouped by I DSS as follows. Maximum Channel Dissipation Curve Channel Power Dissipation Pch (m W) 600 Typical Output Characteristics 10 VGS = 0 V Drain Current ID (m A) -...