6AM14 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Low drive current High speed switching High density mounting Outline Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at 6 Drive operation Symbol VDSS VGSS ID ID(pulse)- 1 IDR Pch- 2 Pch- 2 Tch Tstg Nch 60 ±20 7 28 7 42 4.8 150 - 55 to +150 Pch - 60 ±20 - 7 - 28 - 7 Unit V V A A A W W °C °C Electrical Characteristics N Channel (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min Typ - - - - - 0.14 Max - - ±10 250 1.5 0.2 Unit V V µA µA V Ω Test conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 VDS = 10 V, ID = 1 m A ID = 4 A VGS = 4 V- 1 - 0.22 0.5 Ω ID = 2 A VGS = 2.5 V- 1 Forward transfer admittance |yfs| 4.0 6.5 - S ID = 4 A VDS = 10 V- 1 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test Ciss Coss Crss td(on) tr td(off) tf VDF trr - - - - - - - - - 500 240 30 15 90 110 250 1.0 170 - - - - - - - - - p F p F p F ns ns ns ns V ns IF = 7 A, VGS = 0 IF = 7 A, VGS = 0 di F/dt = 50 A/µs VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 4 A RL = 7.5 Ω V(BR)DS 60 S V(BR)GS ±20 S IGSS - - Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) 0.5 RDS(on) - 3 Electrical Characteristics P Channel (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min Typ - - - - - 0.12 Max - -...