H7N0308CF
H7N0308CF is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance
- RDS(on) = 3.8 mΩ typ.
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220CFM
ADE-208-1570A(Z)
2nd. Edition Aug. 2002
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation
V DSS
V GSS
ID I Note 1
D(pulse)
I DR
Pch Note 2
Channel to Case Thermal Impedance θch-c
Channel to Ambient Thermal Impedance
θch-a
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C
Ratings 30 ±20 60 240 60 30 4.17 62.5
- 55 to +150
Unit V V A A A W °C/W °C/W
°C °C
Rev.1, Aug. 2002, page 2 of 2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol...
