HA22039 Datasheet | Hitachi Semiconductor

Features - - - - Suitable for low distortion of Micro Wave Application Low voltage and low current operation (3V, 7m A typ.) Low insertion loss (1.0 d B typ. @800MHz) Small surface mount package (MPAK- 6) Outline MPAK- 6 This Device si sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues Ga As. Since dust or fume of Ga As is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Aer. And it should never be thrown out with general industrial or domestic wastes. Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Symbol Vdd Idd Pd Tch Tstg Topr Ratings 5 60 100 150 - 55 to +125 - 30 to +85 Unit V m A m W °C °C °C Electrical Characteristics (Ta = 25°C, Vdd = 3V, Idd = 7m A) Item Insertion loss Symbol CL Min 0 Typ 1 Max 3 Unit d B Test Conditions f = 800 MHz, PRF = -10d Bm, Plo = 0d Bm Typical Performance (Ta = 25°C, Vdd = 3V, Idd = 7m A) Item 3rd order input intercept point Noise Figure (DSB) Symbol IP3in NF Typ 12 7 Unit d Bm d B Test Conditions f = 800 MHz, PRF = -10d Bm, Plo = 0d Bm Block Diagram Lo in - 0.16φ, 5.5T Vd - - - IF out 1 0.16φ, 7.5T 6 0.16φ, 7.5T - 2 5 - - 100 - RF in - 10k - 1000p F Pin Arrangement Top View e f a b 5 2 g h c d 4 GG : Mark Type a to d : Year Code (variable) e to f : Monthly Code (variable) Pin No. 1 2 3 4 5 6 Pin name G1 D1 D2 S2 S1 G2 Function Gate Drain Drain Source Source Gate Pattern Layout Front Side view of PCB...