HA22040 Datasheet | Hitachi Semiconductor

Features - - - - - Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (2.7V, 6m A typ.) High conversion gain (10.5 d B typ. @1489MHz) Low 3rd-order intercept point (IP3in=-0.5d Bm typ, @1489MHz) Small surface mount package (MPAK-6) Outline MPAK- 6 This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues Ga As. Since dust or fume of As,which is a ponent of Ga As, is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Aer. And it should never be thrown out with general industrial or domestic wastes. Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Maximum input power Symbol Vdd Idd Pd Tch Tstg Topr Pin max Ratings 5 15 100 150 - 55 to +125 - 20 to +70 +15 Unit V m A m W °C °C °C d Bm Electrical Characteristics (Ta = 25°C, Vdd = 2.7V) Item Quiescent current Conversion gain Symbol Idd CG Min 3.5 8.5 Typ 6 10.5 Max 8.5 12.5 Unit m A d B Test Conditions No signal f=1489MHz, f Lo=1619MHz, PLo=-12d Bm, IF=130MHz, Pin=-30d Bm f=1489MHz,f Lo=1619MHz, PLo=-12d Bm,IF=130MHz Noise figure - 4.5 6 d B Typical Performance (Ta = 25°C, Vdd = 2.7V) Item VSWR (input) 3rd order intercept point Symbol VSWR in IP3in Typ 1.5 -0.5 Unit - d Bm Test Conditions f = 1.489 GHz f = 1.489 GHz, fud =1.490 Ghz, Pin=-30d Bm,f Lo=1.619GHz, PLo=-12d Bm Pin Arrangement Mark type : GH Yearly code : a to d Monthly code : e to h Top View d e 2 f g h 3 a b c d 4 5 Yearly code Year 1999 2000 2001 2002 a Mark b c Monthly code Month January February March April May June July August September October November December e Mark f g h Pin No. 1 2 3 4 5 6 Pin name IF out Cs RF in Vdd GND Lo in Function IF output Bypath capacitor RF input Voltage supply Ground Local input Block Diagram 5.6n H Vdd 2200p...