HAF1001 Datasheet | Hitachi Semiconductor

Features This FET has the over temperature shut- down capability sensing to the junction temperature. This FET has the built- in over temperature shut- down circuit in the gate area. And this circuit operation to shut- down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. - Logic level operation (- 4 to - 6 V Gate drive) - High endurance capability against to the short circuit - Built- in the over temperature shut- down circuit - Latch type shut- down operation (Need 0 voltage recovery) Outline TO- 220AB D 4 Gate resistor Tempe- rature Sencing Circuit Latch Circuit Gate Shut- down Circuit 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS+ VGSS- ID I D(pulse) Note1 Ratings - 60 - 16 3 - 15 - 30 - 15 Unit V V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg Note2 50 150 - 55 to +150 Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd VOP Min - 3.5 - - - - - - - - 3.5 Typ - - - -...