HAT2016R Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 30 ±20 6.5 52 6.5 2 3 150 - 55 to +150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 30 ±20 - - 1.0 - - 5 - - - - - - - - - Typ - - - - - 0.03 0.05 8 560 380 170 30 270 40 65 0.9 45 Max - - ±10 10 2.0 0.045 0.08 - - - - - - - - 1.4 - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns IF = 6.5A, VGS = 0 Note4 IF = 6.5A, VGS = 0 di F/ dt =20A/µs Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10V, I D = 1m A I D = 4A, VGS = 10V Note4 I D = 4A, VGS = 4V Note4 I D = 4A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 4V, ID = 4A VDD ≅...