HAT2051T Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP- 8 65 34 1 D 8 D 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Pch Tch Tstg Note2 Note3 Note1 Ratings 30 ± 10 1 4 1 0.8 1.2 150 - 55 to + 150 Unit V V A A A W W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 10 - - 0.75 - - 1.4 - - - - - - - - - Typ - - - - - 0.14 0.2 2.2 155 75 35 12 30 35 25 0.81 35 Max - - ± 10 1 1.75 0.2 0.3 - - - - - -...