HAT3008R
HAT3008R is Silicon N/P Channel Power MOSFET manufactured by Hitachi Semiconductor.
Features
- -
- - For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
Outline
SOP- 8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
Nch
Pch
HAT3008R/HAT3008RJ
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg
Note2 Note3
Unit Pch
- 60 ± 20
- 3.5
- 28
- 3.5 V V A A A
VDSS VGSS ID I D(pulse) I DR I AP Note4
Note4 Note1
60 ±20 5 40 5
- 5
- - 3.5
- 1.05 2 3 150
- 55 to + 150
- A
- m J W W °C °C
- 2.14 2 3 150
- 55 to + 150
PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Value at Tch=25°C, Rg≥50Ω
HAT3008R/HAT3008RJ
Electrical Characteristics (Ta =...