Download HAT3008R Datasheet PDF
Hitachi Semiconductor
HAT3008R
HAT3008R is Silicon N/P Channel Power MOSFET manufactured by Hitachi Semiconductor.
Features - - - - For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP- 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Nch Pch HAT3008R/HAT3008RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT3008R HAT3008RJ Avalanche energy HAT3008R HAT3008RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Unit Pch - 60 ± 20 - 3.5 - 28 - 3.5 V V A A A VDSS VGSS ID I D(pulse) I DR I AP Note4 Note4 Note1 60 ±20 5 40 5 - 5 - - 3.5 - 1.05 2 3 150 - 55 to + 150 - A - m J W W °C °C - 2.14 2 3 150 - 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Value at Tch=25°C, Rg≥50Ω HAT3008R/HAT3008RJ Electrical Characteristics (Ta =...