• Part: HSB0104YP
  • Description: Silicon Schottky Barrier Diode for High Speed Switching
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 27.77 KB
Download HSB0104YP Datasheet PDF
Hitachi Semiconductor
HSB0104YP
HSB0104YP is Silicon Schottky Barrier Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features - Can be used for protection of signal-bus lines. - The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package. Ordering Information Type No. HSB0104YP Laser Mark E4 Package Code CMPAK-4 Outline 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Symbol VRRM Io - 1 Value 40 100 Unit V m A A °C °C IFSM Tj - 2 3 125 -55 to +125 Tstg 1. Per one device 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Symbol VF IR C Min - - - Typ - - 20 Max 0.58 50 - Unit V µA p F Test Condition I F = 100 m A VR = 40V VR = 0V, 1=1MHz Main Characteristic 1.0 Pulse test 10 Forward current IF (A) -1 Pulse test Reverse current I R...