HSB0104YP
HSB0104YP is Silicon Schottky Barrier Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features
- Can be used for protection of signal-bus lines.
- The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.
Ordering Information
Type No. HSB0104YP Laser Mark E4 Package Code CMPAK-4
Outline
2 1 2 3 4 Anode Anode Cathode Cathode
(Top View)
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Symbol VRRM Io
- 1
Value 40 100
Unit V m A A °C °C
IFSM
Tj
- 2
3 125 -55 to +125
Tstg
1. Per one device 2. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Symbol VF IR C Min
- -
- Typ
- - 20 Max 0.58 50
- Unit V µA p F Test Condition I F = 100 m A VR = 40V VR = 0V, 1=1MHz
Main Characteristic
1.0 Pulse test 10
Forward current IF (A)
-1
Pulse test
Reverse current I R...