HSB226YP
HSB226YP is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Low reverse current, Low capacitance.
- CMPAK-4 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB226YP Laser Mark E5 Package Code CMPAK-4
Outline
4 3
2 1 2 3 4 Anode Anode Cathode Cathode
(Top View)
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Symbol VRRM Value 25 200 50 125 -55 to +125 Unit V m A m A °C °C
IFSM
- 1- 2
I F- 2 Tj Tstg
Notes: 1. 10msec sine wave 1 pulse Notes: 2. Two device total
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance IR C Min
- -
- - Typ
- -
- - Max 0.33 0.38 0.45 2.80 Unit V V µA p F Test Condition I F = 1 m A I F = 5 m A VR = 20V VR = 1V, f = 1 MHz
Note: 1. Per one device
Main Characteristic
10 10
Forward current IF (A)
1 0
-4
Pulse test Ta=75°C
-2 -3
Ta=7°C Ta=25°C
10 10 10 10 10 10
Reverse current I R (A)
-1
-5
-4...
