HSB83
HSB83 is Silicon Epitaxial Planar Diode for High Voltage Switching manufactured by Hitachi Semiconductor.
Features
- High reverse voltage. (VR=250V)
- CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB83 Laser Mark F7 Package Code CMPAK
Outline
1 1 NC 2 Anode 3 Cathode
(Top View)
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM I FSM IO Tj Tstg
- 1
Value 300 250 300 2 100 125 -55 to +125
Unit V V m A A m A °C °C
1. Value at duration of 10msec.
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min
- -
- -
- Typ
- -
- -
- Max 1.2 0.2 100 3.0 100 p F ns Unit V µA Test Condition I F = 100 m A VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR =30 m A, Irr = 3m A, RL = 100Ω
Main Characteristic
-2 -6
10 10
(A)
-3
Forward current IF
10 10 10
-5
-6
Reverse current I R...
