HSC119
HSC119 is Silicon Epitaxial Planar Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features
- Low capacitance. (C=2.0p F max)
- Short reverse recovery time. (trr =3.0ns max)
- Ultra small F lat P ackage (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC119 Laser Mark H1 Package Code UFP
Outline
Cathode mark Mark 1
H1
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Average forward current Peak rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRM VR IO I FM I FSM Tj Tstg
- 1
Value 85 80 100 300 4 125
- 55 to +125
Unit V V m A m A A °C °C
1. Within 1µs forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time- 1 IR C t rr Min
- -
- -
- Typ
- -
- -
- Max 0.8 1.2 0.1 2.0 3.0 µA p F ns Unit V Test Condition I F = 10 m A I F = 100 m A VR = 80V VR = 0V, f = 1 MHz I F = 10 m A, VR = 6V RL=50Ω
Notes 1. Reverse recovery time test circuit
DC Supply
0.1µF
3k Ω Sampling Rin =50 Ω Oscilloscope
Ro =50 Ω Pulse Generator
Trigger
Main Characteristic
-4
10 10
Reverse current I R (A)
-5
(A)
Forward current...
